BLM9D3336-12AM分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

BLM9D3336-12AM屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLM9D3336-12AM晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The BLM9D3336-12AM is a 3-stage 12 W fully integrated Doherty MMIC solution using

Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device,

input splitter and output combiner are integrated in a single package. This multiband

device is perfectly suited as a device in the frequency range from 3300 MHz to 3650 MHz.

Available in LGA outline.

Features and benefits

Integrated input splitter

Integrated output combiner

Very high efficiency

Designed for broadband operation (frequency 3300 MHz to 3650 MHz)

Independent control of carrier and peaking bias

Integrated ESD protection

Excellent thermal stability

High power gain, input and output matched to impedance 50 ?

For RoHS compliance see the product details on the Ampleon website

Applications

RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA, LTE and NR

small cell base stations in the 3300 MHz to 3650 MHz frequency range