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DE275X2-102N06A中文資料IXYS數(shù)據(jù)手冊PDF規(guī)格書

DE275X2-102N06A
廠商型號

DE275X2-102N06A

功能描述

RF Power MOSFET

文件大小

147.19 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 IXYS Corporation
企業(yè)簡稱

IXYS

中文名稱

IXYS Corporation官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-15 15:58:00

DE275X2-102N06A規(guī)格書詳情

The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

? Common Source Push-Pull Pair

? N-Channel Enhancement Mode

? Low Qg and Rg

? High dv/dt

? Nanosecond Switching

Features

? Isolated Substrate

? high isolation voltage (>2500V)

? excellent thermal transfer

? Increased temperature and power cycling capability

? IXYS advanced low Qg process

? Low gate charge and capacitances

? easier to drive

? faster switching

? Low RDS(on)

? Very low insertion inductance (<2nH)

? No beryllium oxide (BeO) or other hazardous materials

Advantages

? High Performance Push-Pull RF Package

? Optimized for RF and high speed switching at frequencies to >100MHz

? Easy to mount—no insulators needed

? High power density

產(chǎn)品屬性

  • 型號:

    DE275X2-102N06A

  • 制造商:

    IXYS Corporation

  • 功能描述:

    MOSFET N RF DE275X2

  • 功能描述:

    MOSFET, N, RF, DE275X2

  • 功能描述:

    DE275X2 Series N-Channel 1000 Vds 800 mOhms 50 nC 1180 W RF Power Mosfet

  • 功能描述:

    MOSFET, N CH, RF, 16A, 1KV, 1.18KW; Transistor

  • Type:

    RF MOSFET; Drain Source Voltage

  • Vds:

    1kV; Continuous Drain Current

  • Id:

    16A; Power Dissipation

  • Pd:

    1.18kW; Operating Temperature

  • Min:

    -55C; Operating Temperature

  • Max:

    175C ;RoHS

  • Compliant:

    Yes

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