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DS125

Homogeneity and reliability

LUMILEDSLumileds Lighting Company

飛光半導(dǎo)體

DS1250AB

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250AB-100

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250AB-70

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250ABP-100-IND

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250ABP-70-IND

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250BL

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250BL-100

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250BL-100-IND

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250BL-70

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250BL-70-IND

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250W

3.3V 4096k Nonvolatile SRAM

FEATURES 10yearsminimumdataretentionintheabsenceofexternalpower Dataisautomaticallyprotectedduringpowerloss Replaces512kx8volatilestaticRAM,EEPROMorFlashmemory Unlimitedwritecycles Low-powerCMOS Readandwriteaccesstimesasfastas150ns

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250WP-150

3.3V 4096k Nonvolatile SRAM

FEATURES 10yearsminimumdataretentionintheabsenceofexternalpower Dataisautomaticallyprotectedduringpowerloss Replaces512kx8volatilestaticRAM,EEPROMorFlashmemory Unlimitedwritecycles Low-powerCMOS Readandwriteaccesstimesasfastas150ns

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250WP-150-IND

3.3V 4096k Nonvolatile SRAM

FEATURES 10yearsminimumdataretentionintheabsenceofexternalpower Dataisautomaticallyprotectedduringpowerloss Replaces512kx8volatilestaticRAM,EEPROMorFlashmemory Unlimitedwritecycles Low-powerCMOS Readandwriteaccesstimesasfastas150ns

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250Y

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250Y-100

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250Y-70

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250YL-100

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250YL-100-IND

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250YL-70

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

詳細參數(shù)

  • 型號：

    DS125

  • 制造商：

    Maxim Integrated Products

供應(yīng)商型號品牌批號封裝庫存備注價格
DALLAS
23+
SOP
9980
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
DALLAS
23+
SOP
13
原裝正品現(xiàn)貨
 詢價
DALLAS
DIP-32
3200
原裝長期供貨!
 詢價
DALLAS
24+
DIP
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
DALLAS
15+
DIP16
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
DALLAS
23+
DIP
65480
詢價
DAL
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
DALLAS
2020+
DIP
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
DALLAS
新
8
全新原裝 貨期兩周
 詢價
DALLAS
24+
SMD
193
現(xiàn)貨
 詢價
更多DS125供應(yīng)商 更新時間2025-1-19 14:02:00

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