首頁 >ELM9130R-S>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
SMD28PinPassiveDelayLines SMD28PinPassiveDelayLines | PCA PCA ELECTRONICS INC. | PCA | ||
5A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness | Intersil Intersil Corporation | Intersil | ||
5A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness | Intersil Intersil Corporation | Intersil | ||
5A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness | Intersil Intersil Corporation | Intersil | ||
SecondGenerationRadHardMOSFETResults | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
6A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness | Intersil Intersil Corporation | Intersil | ||
6A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness | Intersil Intersil Corporation | Intersil | ||
6A,-100V,0.550Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardness | Intersil Intersil Corporation | Intersil | ||
6A,-100V,0.565Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | Intersil Intersil Corporation | Intersil | ||
6A,-100V,0.565Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | Intersil Intersil Corporation | Intersil | ||
6A,-100V,0.565Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | Intersil Intersil Corporation | Intersil | ||
5A,-100V,0.680Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
5A,-100V,0.680Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
6A,-100V,0.660Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | Intersil Intersil Corporation | Intersil | ||
6A,-100V,0.660Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | Intersil Intersil Corporation | Intersil | ||
PChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG | ||
3ALEDDriverwithDimmingControl | GAMMA GAMMA electronics | GAMMA | ||
FrequencySynthesizer | SHOULDERShoulder 好達(dá)電子無錫市好達(dá)電子股份有限公司 | SHOULDER | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ELM |
16+ |
SOT-89 |
10000 |
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
ELM |
24+ |
SOT-89 |
6200 |
新進(jìn)庫存/原裝 |
詢價 | ||
23+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||||
23+ |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||||
ELM |
2016+ |
SOT89 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ELM榆木 |
1742+ |
SOT89-3 |
98215 |
只要網(wǎng)上有絕對有貨!只做原裝正品! |
詢價 | ||
ELM榆木 |
2018+ |
SOT89-3 |
13692 |
升壓IC原裝現(xiàn)貨有優(yōu)勢 |
詢價 | ||
ELM |
22+ |
SOT-89 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
ELM |
22+ |
SOT-89 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
ELM |
24+ |
SOT89 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 |
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