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FDU7N60NZTU

N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB7N60UNDF

600V,7AShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP7N60RUFD

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP7N60RUFD

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP7N60RUFDTU

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF7N60LSD

600V,7ALowSaturationIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)providesverylowconductionandswitchinglosses.ThedeviceisdesignedforLampapplicationswhereverylowOn-VoltageDropisarequiredfeature. Features ?Lowsaturationvoltage:VCE(sat)=1.4V@IC=7A ?Highinputimp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF7N60RUFD

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF7N60RUFDTU

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FIR7N60AALG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR7N60ABPG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR7N60BPG

AdvancedN-ChPowerMOSFET-I

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR7N60FG

AdvancedN-ChPowerMOSFET-I

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FMF7N60

7A600VNCHANNELISOLATEDPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FQA7N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA7N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7.7A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQAF7N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60

600VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQB7N60TM

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FDU7N60NZTU

  • 功能描述：

    MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD/仙童
24+
TO251
8950
BOM配單專家,發(fā)貨快,價(jià)格低
 詢價(jià)
onsemi
24+
I-PAK
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
FAIRCHILD
TO-251
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價(jià)
FAIRCHILD/仙童
24+
TO-251
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價(jià)
 詢價(jià)
FAIRCHILD/仙童
21+
NA
6850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
ONSemiconductor
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
FAIRCHILD
22+23+
TO251
11279
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
FSC/ON
23+
原包裝原封 □□
3400
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢 庫存
 詢價(jià)
FAIRCHILD/仙童
22+
TO-251
20000
保證原裝正品,假一陪十
 詢價(jià)
更多FDU7N60NZTU供應(yīng)商 更新時(shí)間2025-1-10 16:36:00

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