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FGP7N60RUFD

600V, 7A RUF IGBT CO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP7N60RUFD

600V, 7A RUF IGBT CO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP7N60RUFD_0610

600V, 7A RUF IGBT CO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP7N60RUFDTU

600V, 7A RUF IGBT CO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF7N60LSD

600V,7ALowSaturationIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)providesverylowconductionandswitchinglosses.ThedeviceisdesignedforLampapplicationswhereverylowOn-VoltageDropisarequiredfeature. Features ?Lowsaturationvoltage:VCE(sat)=1.4V@IC=7A ?Highinputimp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF7N60RUFD

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF7N60RUFDTU

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FIR7N60AALG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR7N60ABPG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR7N60BPG

AdvancedN-ChPowerMOSFET-I

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR7N60FG

AdvancedN-ChPowerMOSFET-I

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FMF7N60

7A600VNCHANNELISOLATEDPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FQA7N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA7N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7.7A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQAF7N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60

600VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQB7N60TM

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60TMWS

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    FGP7N60RUFD

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    600V, 7A RUF IGBT CO-PAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD
24+
TO-220
8866
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
FAIRCHILD
2023+
TO-220
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
PANASONIC/松下
23+
TO-220F
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
FAIRCHILD/仙童
23+
TO-220
10000
公司只做原裝正品
詢價(jià)
FAIRCHILD/仙童
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
FAIRCHILD/仙童
23+
TO-TO-220
44622
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
FAIRCHILD/仙童
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
原裝正品
23+
TO-220
53798
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
詢價(jià)
FAIRCHILD/仙童
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
更多FGP7N60RUFD供應(yīng)商 更新時(shí)間2025-1-14 16:30:00