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FGA30N60LSDTU

MOSFETs and bipolar transistors

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA30N60LSDTU

包裝:管件 封裝/外殼:TO-3P-3,SC-65-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT TRENCH/FS 600V 60A TO3P

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH30N60LSD

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N60LSDTU

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGW30N60VD

DiscreteIGBT(High-SpeedVseries)600V/30A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

600V,SMPSSeriesN-ChannelIGBTwith

TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar

Intersil

Intersil Corporation

G30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

G30N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

HIA30N60BP

600VPTIGBT

SEMIHOW

SemiHow Co.,Ltd.

HIH30N60BP

600VPTIGBT

SEMIHOW

SemiHow Co.,Ltd.

ICE30N60W

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

ICE30N60W

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

IGB30N60T

LowLossIGBTinTrenchStoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    FGA30N60LSDTU

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • IGBT 類型:

    溝槽型場(chǎng)截止

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    1.4V @ 15V,30A

  • 開關(guān)能量:

    1.1mJ(開),21mJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開/關(guān))值:

    18ns/250ns

  • 測(cè)試條件:

    400V,30A,6.8 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-3P-3,SC-65-3

  • 供應(yīng)商器件封裝:

    TO-3P

  • 描述:

    IGBT TRENCH/FS 600V 60A TO3P

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD/仙童
24+
TO3P
8950
BOM配單專家,發(fā)貨快,價(jià)格低
詢價(jià)
onsemi/安森美
新批次
TO-3P
4500
詢價(jià)
onsemi(安森美)
23+
TO-3P
928
原廠訂貨渠道,支持BOM配單一站式服務(wù)
詢價(jià)
Fairchild
23+
TO-3P
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
Fairchild
24+
94
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
FAI
2018+
TO3P
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
詢價(jià)
FAIRCHILD
22+23+
TO3P
14423
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
三年內(nèi)
1983
納立只做原裝正品13590203865
詢價(jià)
ON/安森美
24+
TO-3P-3
25500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售
詢價(jià)
更多FGA30N60LSDTU供應(yīng)商 更新時(shí)間2024-10-25 16:36:00