首頁 >FGP30N6S2D>規(guī)格書列表

零件編號(hào)下載&訂購功能描述制造商&上傳企業(yè)LOGO

FGP30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2D

包裝:管件 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 45A 167W TO220AB

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

30N6S2

600V,SMPSIISeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2

600V,SMPSIISeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2DT

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2T

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2

600V,SMPSIISeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2

600V,SMPSIISeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    FGP30N6S2D

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2.5V @ 15V,12A

  • 開關(guān)能量:

    55μJ(開),100μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開/關(guān))值:

    6ns/40ns

  • 測試條件:

    390V,12A,10 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應(yīng)商器件封裝:

    TO-220-3

  • 描述:

    IGBT 600V 45A 167W TO220AB

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD
05+
原廠原裝
5326
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
FAIRCHIL
24+
TO-220
8866
詢價(jià)
FAIRCHIL
23+
TO-220
8600
全新原裝現(xiàn)貨
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
FAIRC
2023+
TO-220
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
FAIRC
24+
TO-220
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
詢價(jià)
ZLG
23+
DIP7
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
Fairchild/ON
22+
TO220AB
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Fairchild/ON
21+
TO220AB
13880
公司只售原裝,支持實(shí)單
詢價(jià)
ON Semiconductor
2022+
TO-220-3
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
更多FGP30N6S2D供應(yīng)商 更新時(shí)間2025-1-14 16:04:00