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HMS21N60

N-ChannelSuperJunctionPowerMOSFETII

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS21N60F

N-ChannelSuperJunctionPowerMOSFETII

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IRFP21N60L

PowerMOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimpledrive requirement ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategorizati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP21N60L

SMPSMOSFET

FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero

IRF

International Rectifier

IRFP21N60L

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP21N60L

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.32?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP21N60LPBF

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP21N60LPBF

SMPSMOSFET

FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero

IRF

International Rectifier

IRFR21N60L

SMPSMOSFET

IRF

International Rectifier

IXFH21N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

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6852
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194
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100500
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2022
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80000
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68900
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更多FMW21N60GPB供應(yīng)商 更新時間2025-1-27 10:12:00