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ME60N06G

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTB60N06

TMOSPOWERFET60AMPERES60VOLTS

HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB60N06HD

TMOSPOWERFET60AMPERES60VOLTS

HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB60N06HD

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTM60N06

N-CHANNELTWOSPOWERFETs

55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM60N06

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM60N06

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR TheseTMOSPowerFETsaredesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimes

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP60N06

TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM

Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP60N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP60N06HD

TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM

Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
N/A
58000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
IR
22+
NA
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
NA
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
NA
7000
詢價(jià)
G
24+
TO
500
詢價(jià)
FAIRCHILD
23+
TO3PL
7635
全新原裝優(yōu)勢(shì)
 詢價(jià)
原廠
23+
TO-3PL
5000
原裝正品,假一罰十
 詢價(jià)
FSC
2016+
TO3PL
6523
只做進(jìn)口原裝現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
F
19+
TO-3PL
72161
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
FSC
24+
TO-3PL
564
詢價(jià)
更多G60N06T供應(yīng)商 更新時(shí)間2025-5-4 11:06:00

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