| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.95Ω(Max)@VGS=10V DESCRIPTION ·Switchmodepowersupply ·DC-DCconverters ·ACmotorcontrol | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs
| IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PolarPowerMOSFETHiPerFET Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQClass Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs
| IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQClass Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages | IXYS IXYS Corporation | IXYS | ||
PolarPowerMOSFETHiPerFET Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarPowerMOSFETHiPerFET Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw | IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFASTIGBTLightspeedSeries Features ?VeryhighfrequencyIGBT ?NewgenerationHDMOSTMprocess ?InternationalstandardpackageJEDECTO-247 ?Highpeakcurrenthandlingcapability Applications ?PFCcircuit ?ACmotorspeedcontrol ?DCservoandrobotdrives ?Switch-modeandresonant-modepowersupplies ?High | IXYS IXYS Corporation | IXYS | ||
HiPerFASTIGBTLightspeedSeries | IXYS IXYS Corporation | IXYS |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
S |
23+ |
TO-220F |
20000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
SEMIHOW |
1735+ |
TO220F |
6528 |
科恒偉業(yè)!只做原裝正品!假一賠十! |
詢價 | ||
SEMIHOW |
2021+ |
TO-220F |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
S |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價 | ||
S |
TO-220F |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
S |
23+ |
TO-220F |
6000 |
原裝正品，支持實單 |
詢價 | ||
SEMIHOW |
10+ |
TO220F |
10 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
st |
2023+ |
TO-220F |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
SEMIHOW |
23+ |
TO220F |
2510 |
原廠原裝正品 |
詢價 | ||
SEMIHOW |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 |
相關(guān)規(guī)格書
更多- HGTG11N120CND
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- HI5702KCB
- HI5714_4CB
相關(guān)庫存
更多- HI1-0201-5
- HI1-200-5
- HI1-201-2
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- HI1-201HS-2
- HI1-201HS-5
- HI1-303-2
- HI1-381-5
- HI1-5041-5
- HI1-5043-2
- HI1-5047-5
- HI1-5051-2
- HI1-506-2
- HI1-506A
- HI1-506A-5
- HI1-507-2
- HI1-508_883
- HI1-508-5
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- HI1-509_883
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- HI1-524-5
- HI1-546_883
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- HI1-574AKD-5
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- HI2-200-5
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- HI3-5043-5
- HI3-506A-5
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- HI3-509-5
- HI3-516-5
- HI3-546-5
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- HI3-574AJN-5
- HI3-674AKN-5
- HI4P509-5
- HI5628_6IN
- HI5703KCB
- HI5714_7CB
