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HGT1S12N60B3S中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HGT1S12N60B3S
廠商型號(hào)

HGT1S12N60B3S

功能描述

27A, 600V, UFS Series N-Channel IGBTs

文件大小

112.91 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱(chēng)

Intersil

中文名稱(chēng)

Intersil Corporation官網(wǎng)

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-12-25 17:10:00

HGT1S12N60B3S規(guī)格書(shū)詳情

The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49171.

Features

? 27A, 600V, TC = 25oC

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC

? Short Circuit Rating

? Low Conduction Loss

? Related Literature

?? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    HGT1S12N60B3S

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    Harris Corporation

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999999
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24+
DIP
860000
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19960
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