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HGT1S14N37G3VLS中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

HGT1S14N37G3VLS
廠商型號

HGT1S14N37G3VLS

功能描述

14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs

文件大小

159.43 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-25 17:36:00

HGT1S14N37G3VLS規(guī)格書詳情

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

Features

? Logic Level Gate Drive

? Internal Voltage Clamp

? ESD Gate Protection

? TJ = 175°C

? Internal Series and Shunt Gate Resistors

? Low Conduction Loss

? Ignition Energy Capable

產(chǎn)品屬性

  • 型號:

    HGT1S14N37G3VLS

  • 功能描述:

    IGBT 晶體管 14A 370V

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
FAI
TO263
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價
intersil
2020+
TO263-3
210000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價
FAIRCHILD/仙童
2223+
TO-263
26800
只做原裝正品假一賠十為客戶做到零風(fēng)險
詢價
FAI
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
詢價
FAI
23+
65480
詢價
FAI
22+23+
TO263
76024
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價
FSC
23+
QFP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
FAIRCHILD/仙童
22+
SOT-263
20000
保證原裝正品,假一陪十
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FAIRCHILD
05+
原廠原裝
6270
只做全新原裝真實現(xiàn)貨供應(yīng)
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