首頁 >HMS80N10KA>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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HMS80N10KA | Marking:HMS80N10KA;Package:TO-252-2L;N-Channel Super Trench Power MOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司 | HMSEMI | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETTMMOSFETISOPLUS220 HiPerFET?MOSFETISOPLUS220? ElectricallyIsolatedBackSurface Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs VDSS=100V ID25=80A RDS(on)=12.5m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class VDSS=100V ID25=80A RDS(on)=15m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -ea | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs VDSS=100V ID25=80A RDS(on)=12.5m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class VDSS=100V ID25=80A RDS(on)=15m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -ea | IXYS IXYS Corporation | IXYS | ||
TrenchMVTMPowerMOSFET VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on) | IXYS IXYS Corporation | IXYS |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HYNIX |
24+ |
SOP-28P |
430 |
詢價 | |||
ABOV |
23+ |
SOP-28 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ABOV |
2022 |
SOP-28 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
ABOV |
SOP-28 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
HYNIX |
23+ |
SOP-28P |
3700 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
ABOV |
23+ |
NA/ |
9882 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ROHS |
ROHS |
56520 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
N/A |
210 |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
HY |
23+ |
SOP |
8560 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
HY |
22+23+ |
SOP |
69911 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 |
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