首頁>HY57V651620BTC-8>規(guī)格書詳情
HY57V651620BTC-8中文資料海力士數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多- HY57V651620BLTC-6
- HY57V651620BLTC-10
- HY57V651620BTC-10
- HY57V651620BLTC-7
- HY57V651620BTC-55
- HY57V651620BTC-10S
- HY57V651620BLTC-8
- HY57V651620BTC-75
- HY57V651620BTC-10P
- HY57V651620BLTC-75
- HY57V651620BLTC-10S
- HY57V651620B
- HY57V651620BTC-7
- HY57V651620BLTC-55
- HY57V64820HGTP-H
- HY57V64820HGTP-8
- HY57V64820HGTP-6
- HY57V64820HGTP-K
HY57V651620BTC-8規(guī)格書詳情
DESCRIPTION
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16.
FEATURES
? Single 3.3±0.3V power supplyNote)
? All device pins are compatible with LVTTL interface
? JEDEC standard 400mil 54 pin TSOP-II with 0.8mm of pin pitch
? All inputs and outputs referenced to positive edge of system clock
? Data mask function by UDQM or LDQM
? Internal four banks operation
? Auto refresh and self refresh
? 4096 refresh cycles/64ms
? Programmable Burst Length and Burst Type
-1, 2, 4, 8 or Full page for Sequential Burst
-1, 2, 4 or 8 for Interleave Burst
? Programmable CAS Latency; 2, 3 Clocks
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
N/A |
23+ |
SOJ |
6500 |
全新原裝假一賠十 |
詢價 | ||
HYINX |
24+ |
TSOP |
20000 |
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅！！ |
詢價 | ||
HYN |
23+ |
NA |
368 |
專做原裝正品,假一罰百! |
詢價 | ||
Skhynix |
1844+ |
TSOP |
6528 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
HYNIX |
21+ |
TSOP |
1458 |
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢! |
詢價 | ||
HYUNDAI |
23+ |
TSOP |
3000 |
特價庫存 |
詢價 | ||
Hynix |
24+ |
TSOP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
HYUNDAI |
2022 |
TSOP |
1950 |
全新原裝現(xiàn)貨 |
詢價 | ||
HYNIX |
20+ |
SOP56 |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價 | ||
HYNIX/海力士 |
23+ |
TSOP-54 |
3942 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 |
