首頁 >IDT70T633S12BFGI>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDT Integrated Device Technology, Inc. | IDT |
詳細參數(shù)
- 型號:
IDT70T633S12BFGI
- 制造商:
Integrated Device Technology Inc
- 功能描述:
IC SRAM 9MBIT 12NS 208FPBGA
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IDT |
22+ |
208CABGA (15x15) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IDT |
21+ |
208CABGA (15x15) |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IDT |
23+ |
208CABGA (15x15) |
9000 |
原裝正品,支持實單 |
詢價 | ||
IDT |
23+ |
208-CABGA(15x15) |
73390 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
IDT |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IDT |
22+23+ |
51810 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | |||
IDT |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IDT |
21+ |
6270 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | |||
IDT |
22+ |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | |||
IDT |
2023+ |
NULL |
5800 |
進口原裝,現(xiàn)貨熱賣 |
詢價 |
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