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IRC640

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRC640PBF

HEXFETPOWERMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRF640

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwithbestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredallcommercial-industrialapplicationsatpowerdissipat

IRF

International Rectifier

IRF640

N-CHANNEL200V-0.150ohm-18ATO-220/TO-220FPMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF640

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF640

N-ChannelPowerMOSFETs,18A,150-200V

N-ChannelPowerMOSFETs,18A,150-200V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640

18A,200V,0.180Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=18A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Designedforlowvoltage,highspeedpowerswitching applicationssuch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
938
1600
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
INTREC
23+
NA
2086
專做原裝正品,假一罰百!
 詢價(jià)
GUARDIAN
新
22
全新原裝 貨期兩周
 詢價(jià)
IR
22+
TO-220-5
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-220-5
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-220-5
7000
詢價(jià)
IR
23+
TO-263-5
21368
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
原裝IR
2023+
SOT-223
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
原裝IR
23+
SOT-223
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
2023+
SOT-223
4885
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價(jià)
更多IR640NSPBF供應(yīng)商 更新時(shí)間2025-1-27 14:32:00

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