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IRF9Z24

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

P-CHANNELPOWERMOSFETs

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightmeperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9Z24

POWERMOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

IRF

International Rectifier

IRF9Z24

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9Z24

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-11A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9Z24L

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z24L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24L

PowerMOSFET(Vdss=-60V,Rds(on)=0.28ohm,Id=-11A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-220
7000
詢價
MITEQ
100
詢價
EVLITE
617
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
EVLITE
24+
35200
一級代理/放心采購
 詢價
IR
23+
SOP-8
4545
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
LLOSAM
24+
DIP4
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div>
 詢價
LLOSAM
23+
DIP4
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
VISHAY
00/01+
2352
全新原裝100真實現(xiàn)貨供應(yīng)
 詢價
更多IR9Z24供應(yīng)商 更新時間2025-3-21 10:01:00

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