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IRF710

2.0A,400V,3.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF710

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF710

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710

IRF710-713MTP2N35/2N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF710

N-ChannelMosfetTransistor

·DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDrive

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF710

N-ChannelPowerMOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF710

PowerMOSFETFEATURES

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710A

AdvancedPowerMOSFET(400V,3.6ohm,2A)

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowRDS(ON):2.815?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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MURATA
40
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
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TW
24+
NA
5000
只做原裝公司現(xiàn)貨
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MURATA
24+
35200
一級(jí)代理/放心采購(gòu)
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MURATA/村田
23+
DIP
10000
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MURATA/村田
23+
CAN-3P
8160
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MURATA/村田
22+
CAN-3P
10730
原裝正品
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MURATA/村田
2023+
CAN-3P
11000
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
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MURATA
24+
CAN-3P
39500
進(jìn)口原裝現(xiàn)貨 支持實(shí)單價(jià)優(yōu)
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原廠
2023+
模塊
600
專營(yíng)模塊,繼電器,公司原裝現(xiàn)貨
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23+
模塊
46976
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
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更多IRA-E710STO供應(yīng)商 更新時(shí)間2025-2-24 18:26:00

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