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IRFB260

PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A)

SMPSMOSFET VDSSRDS(on)maxID 200V0.040?56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFB260N

PowerMOSFET(Vdss=200V,Rds(on)max=0.040ohm,Id=56A)

SMPSMOSFET VDSSRDS(on)maxID 200V0.040?56A Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFB260N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB260NPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFB260NPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFI260

TRANSISTORN-CHANNEL(Vdss=200V,Rds(on)=0.060ohm,Id=45A*)

200Volt,0.060?,HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishedadvan

IRF

International Rectifier

IRFI260

SimpleDriveRequirements

IRF

International Rectifier

IRFM260

TRANSISTORN-CHANNEL(BVdss=200V,Rds(on)=0.060ohm,Id=35A*)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETs

IRF

International Rectifier

IRFM260

SimpleDriveRequirements

IRF

International Rectifier

IRFP260

PowerMOSFET(Vdss=200V,Rds(on)=0.04ohm,Id=50A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
23+
TO3PN
28888
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
7000
詢價(jià)
IR
05+
原廠原裝
6301
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
2020+
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
IR
23+
TO247
3
原裝環(huán)保房間現(xiàn)貨假一賠十
 詢價(jià)
IR
23+
TO247
8653
全新原裝優(yōu)勢(shì)
 詢價(jià)
IR
2447
TO-220
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
 詢價(jià)
更多IRF260B供應(yīng)商 更新時(shí)間2025-2-24 16:15:00

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