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IRF3415S

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3415S

PowerMOSFET(Vdss=150V,Rds(on)=0.042ohm,Id=43A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415SPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415STRLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415STRR

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3415

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤42m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP3415

PowerMOSFET(Vdss=150V,Rds(on)=0.042ohm,Id=43A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

IRF

International Rectifier

IRFP3415PBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

IRF

International Rectifier

IRFP3415PBF

AdvancedProcessTechnology

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
N/A
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
N/A
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
N/A
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
N/A
7000
詢價
INFINEON/英飛凌
20
1000
進口原裝現(xiàn)貨假一賠萬力挺實單
 詢價
INFINEON/英飛凌
23+
98000
詢價
24+
N/A
56000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
INFINEON/英飛凌
22+
TO-220AB
20000
深圳原裝現(xiàn)貨正品有單價格可談
 詢價
IR/INFINEON原裝正品
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON/英飛凌
2022+
50
6600
只做原裝,假一罰十,長期供貨。
 詢價
更多IRF3415PBF-H供應(yīng)商 更新時間2025-1-26 14:00:00

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