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IRFC350

N-ChannelEnhancementModeHighRuggednessSeries

IXYS

IXYS Corporation

IRFM350

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM350

POWERMOSFETTHRU-HOLE(TO-254AA)

PartNumberRDS(on)ID IRFM3500.315?14A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransis

IRF

International Rectifier

IRFM350

SimpleDriveRequirements

IRF

International Rectifier

IRFN350

POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=0.315ohm,Id=14A)

RDS(on)0.315? ID14A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi

IRF

International Rectifier

IRFN350

SimpleDriveRequirements

IRF

International Rectifier

IRFP350

16A,400V,0.300Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP350

PowerMOSFET(Vdss=400V,Rds(on)=0.30ohm,Id=16A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP350

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●ImprovedInducttiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3Ppackage

SamsungSamsung semiconductor

三星三星半導體

IRFP350

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP350

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP350

N-ChannelPowerMosfet

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFP350

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP350

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFP350

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP350

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導體

IRFP350A

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowRDS(ON):0.254?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFP350A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=17A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP350FI

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP350LC

PowerMOSFET(Vdss=400V,Rds(on)=0.30ohm,Id=16A)

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
IR
22+
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
48493
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
IR
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
7000
詢價
IR
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
HAR/IR
24+
TO-3
234
詢價
HARRIS
24+
TO-3
1000
原裝現(xiàn)貨假一罰十
 詢價
RCA/IR
23+
2腳鐵帽
5000
原裝正品,假一罰十
 詢價
IR
21+
TO-3
12588
原裝正品,自己庫存 假一罰十
 詢價
更多IRF350A供應商 更新時間2025-1-13 14:01:00

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