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IRF3710ZSPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr

IRF

International Rectifier

IRFI3710

HEXFETPowerMOSFET

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

IRFN3710

TRANSISTORN-CHANNEL(BVdss=100V,Rds(on)=0.028ohm,Id=45A)

100Volt,0.028?,HEXFET Generation5HEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETsarewellknown,prov

IRF

International Rectifier

IRFN3710

N??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP3710

PowerMOSFET(Vdss=100V,Rds(on)=0.025W,Id=57A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3710

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤25m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP3710PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.025廓,ID=57A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3710PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFR3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFR3710Z

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤18m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

IRF

International Rectifier

IRFR3710ZPBF

HEXFET?PowerMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFR3710ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR3710ZTRL

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3710ZTRLPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFR3710ZTRLPbF

HEXFET?PowerMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturesco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRF3710ZSHR

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
IR
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
23+
NA
8910
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553
詢價(jià)
IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
IR
24+
TO-263
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
詢價(jià)
IR
ROHS+Original
NA
8910
專業(yè)電子元器件供應(yīng)鏈/QQ 350053121 /正納電子
詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
詢價(jià)
更多IRF3710ZSHR供應(yīng)商 更新時(shí)間2025-1-11 13:00:00