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IRF640NSPBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書

IRF640NSPBF
廠商型號

IRF640NSPBF

功能描述

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

文件大小

8.24278 Mbytes

頁面數(shù)量

11

生產(chǎn)廠商 Kersemi Electronic Co., Ltd.
企業(yè)簡稱

KERSEMI

中文名稱

Kersemi Electronic Co., Ltd.官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-26 23:00:00

IRF640NSPBF規(guī)格書詳情

Description

Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Advanced Process Technology

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Fully Avalanche Rated

● Ease of Paralleling

● Simple Drive Requirements

● Lead-Free

產(chǎn)品屬性

  • 型號:

    IRF640NSPBF

  • 功能描述:

    MOSFET 30V 1 N-CH 150mOhm HEXFET 200V VDSS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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