| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape& | IRF International Rectifier | IRF | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-CHANNEL200V-0.150ohm-18ATO-263MESHOVERLAY]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwith standardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdv/dtCAPABILITY ■ | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surfacemount ?Low-profilethrough-hole ?Availableintapeandreel ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-channel200V-0.15廓-15A-TO-220MESHOVERLAY??PowerMOSFET Description ThisPowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources Generalfeatures ■Extremelyhighdv/dtcapability ■Gatechargeminimize | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=9.8A) DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào)：
IRF640R
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HARRIS(哈利斯) |
23+ |
TO220AB |
6000 |
誠信服務(wù)，絕對(duì)原裝原盤 |
詢價(jià) | ||
24+ |
N/A |
56000 |
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
IR |
06+ |
TO-263 |
15000 |
自己公司全新庫存絕對(duì)有貨 |
詢價(jià) | ||
IR |
2015+ |
D2-Pak |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價(jià) | ||
IR |
579 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | ||||
IR |
23+ |
TO-263 |
35890 |
詢價(jià) | |||
IR |
23+ |
TO/263 |
7000 |
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購! |
詢價(jià) | ||
IR |
2016+ |
TO-263 |
6528 |
只做原裝正品現(xiàn)貨!或訂貨 |
詢價(jià) | ||
IR |
23+ |
TO263 |
7750 |
全新原裝優(yōu)勢 |
詢價(jià) | ||
IR |
24+ |
D2-Pak |
8866 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IRF640S
- IRF640S2497
- IRF640ST4
- IRF640STRLPBF
- IRF640STRRPBF
- IRF641
- IRF642
- IRF643
- IRF644A
- IRF644FP
- IRF644LPBF
- IRF644NL
- IRF644NPBF
- IRF644NSPBF
- IRF644NSTRLPBF
- IRF644NSTRRPBF
- IRF644S
- IRF644STRL
- IRF644STRR
- IRF645
- IRF646_R4943
- IRF650A
- IRF650B_FP001
- IRF654A
- IRF654B_FP001
- IRF6601
- IRF6602TR1
- IRF6603TR1
- IRF6604TR1
- IRF6607TR1
- IRF6608TR1
- IRF6609TR1
- IRF6609TRPBF
- IRF6610TR1
- IRF6610TRPBF
- IRF6611PBF
- IRF6611TR1PBF
- IRF6612
- IRF6612TR1
- IRF6612TRPBF
- IRF6613TR1
- IRF6613TRPBF
- IRF6614TR1
- IRF6614TRPBF
- IRF6616TR1
相關(guān)庫存
更多- IRF640S2470
- IRF640SPBF
- IRF640STRL
- IRF640STRR
- IRF640T
- IRF641R
- IRF642R
- IRF644
- IRF644B_FP001
- IRF644L
- IRF644N
- IRF644NLPBF
- IRF644NS
- IRF644NSTRL
- IRF644NSTRR
- IRF644PBF
- IRF644SPBF
- IRF644STRLPBF
- IRF644STRRPBF
- IRF646
- IRF647
- IRF650B
- IRF654
- IRF654B
- IRF654BFP001
- IRF6602
- IRF6603
- IRF6604
- IRF6607
- IRF6608
- IRF6609
- IRF6609TR1PBF
- IRF6610
- IRF6610TR1PBF
- IRF6611
- IRF6611TR1
- IRF6611TRPBF
- IRF6612PBF
- IRF6612TR1PBF
- IRF6613
- IRF6613TR1PBF
- IRF6614
- IRF6614TR1PBF
- IRF6616
- IRF6616TR1PBF
