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IRF640STRR中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRF640STRR規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF640L/SiHF640L) is available for low-profile applications.
FEATURES
? Surface Mount
? Low-Profile Through-Hole
? Available in Tape and Reel
? Dynamic dV/dt Rating
? 150 °C Operating Temperature
? Fast Switching
? Fully Avalanche Rated
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號(hào)：
IRF640STRR
- 功能描述：
MOSFET N-Chan 200V 18 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
NA |
1973 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IR |
TO-263 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
24+ |
TO-263 |
200000 |
詢價(jià) | |||
IRC |
1535+ |
200 |
詢價(jià) | ||||
IR |
24+ |
TO-263 |
56000 |
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持 |
詢價(jià) | ||
IR |
24+ |
TO-263 |
35200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
IR |
2023+ |
TO-263 |
50000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
7000 |
詢價(jià) | |||
VISHAY(威世) |
2112+ |
TO-263 |
105000 |
800個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價(jià) | ||
IR |
2022+ |
TO-263 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) |
