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IRF640T

N-channel 200V - 0.15廓 - 15A - TO-220 MESH OVERLAY??Power MOSFET

Description ThisPowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources Generalfeatures ■Extremelyhighdv/dtcapability ■Gatechargeminimize

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRFF640

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

IRFI640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI640G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640G

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=9.8A)

DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in

IRF

International Rectifier

IRFI640G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI640G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640G

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconvert

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    IRF640T

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    N-channel 200V - 0.15ヘ - 15A - TO-220 MESH OVERLAY⑩ Power MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
TO220A
6824
全新原裝
 詢價
FAIRCHILD
24+
TO-220
1000
詢價
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
21+
TO220
10000
原裝現(xiàn)貨假一罰十
 詢價
I
TO-220
22+
6000
十年配單,只做原裝
 詢價
RCA
18
公司優(yōu)勢庫存 熱賣中!!
 詢價
I
23+
TO-220
6000
原裝正品，支持實單
 詢價
FSC
23+
TO-220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
更多IRF640T供應(yīng)商 更新時間2025-4-26 11:18:00

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