零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
HEXFET? Power MOSFET Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
GenerationVTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea17 | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboard | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
8-SOIC(0.154,3.90mm 寬) |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
INFINEON/英飛凌 |
2019+ |
SOP-8 |
78550 |
原廠渠道 可含稅出貨 |
詢價(jià) | ||
IR |
2021+ |
SOP8 |
8903 |
誠(chéng)信經(jīng)營(yíng)..品質(zhì)保證..價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
INFINEON/英飛凌 |
20+ |
SOP-8 |
8000 |
進(jìn)口原裝假一賠十支持含稅 |
詢價(jià) | ||
IR |
24+ |
SOIC-8 |
16554 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
INFINEON |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||||
INFINEON |
22+ |
原封裝 |
81220 |
只做原裝進(jìn)口貨 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
SOP-8 |
15048 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
SOP-8 |
19316 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
INFINEON |
24+ |
原封裝 |
81220 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
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