零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A) SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SMPS MOSFET SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
High frequency DC-DC converters | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A) SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
SMPSMOSFET SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A) SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
SMPSMOSFET SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
N-Channel20V(D-S)MOSFET | BWTECH Bruckewell Technology LTD | BWTECH |
詳細(xì)參數(shù)
- 型號:
IRFB23N20
- 功能描述:
MOSFET N-CH 200V 24A TO-220AB
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
23+ |
TO-220 |
35890 |
詢價 | |||
IR |
2016+ |
TO-220 |
6528 |
只做原裝正品現(xiàn)貨!或訂貨 |
詢價 | ||
IR |
24+ |
TO-220AB |
8866 |
詢價 | |||
IR |
24+ |
原廠封裝 |
500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
23+ |
TO-220AB |
7600 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
05+ |
原廠原裝 |
9051 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 |
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