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IRFB23N20D

Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB23N20D

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB23N20DPBF

SMPS MOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB23N20DPBF

High frequency DC-DC converters

IRF

International Rectifier

IRFS23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DTRLP

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL23N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFSL23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL23N20DPBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

MS23N20Z

N-Channel20V(D-S)MOSFET

BWTECH

Bruckewell Technology LTD

詳細(xì)參數(shù)

  • 型號:

    IRFB23N20

  • 功能描述:

    MOSFET N-CH 200V 24A TO-220AB

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    HEXFET®

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點(diǎn):

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
IR
23+
TO-220
35890
詢價
IR
2016+
TO-220
6528
只做原裝正品現(xiàn)貨!或訂貨
詢價
IR
24+
TO-220AB
8866
詢價
IR
24+
原廠封裝
500
原裝現(xiàn)貨假一罰十
詢價
IR
23+
TO-220
5000
原裝正品,假一罰十
詢價
IR
23+
TO-220AB
7600
全新原裝現(xiàn)貨
詢價
IR
05+
原廠原裝
9051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
更多IRFB23N20供應(yīng)商 更新時間2025-1-14 17:19:00