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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFB42N20D	文件：215.15 Kbytes Page：8 Pages	Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A) Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters	IRF International Rectifier	IRF
IRFB42N20D	文件：67.45 Kbytes Page：6 Pages	High frequency DC-DC converters Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters	IRF International Rectifier	IRF
IRFB42N20D	文件：339.17 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ?DESCRITION ?HighfrequencyDC-DCconverters ?UninterruptiblePowerSupplies ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤55m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperatio	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFB42N20DPBF	文件：165.96 Kbytes Page：8 Pages	HEXFET Power MOSFET Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters ●MotorControl ●Uninterru	IRF International Rectifier	IRF
IRFB42N20DPBF	文件：174.93 Kbytes Page：9 Pages	High frequency DC-DC converters	IRF International Rectifier	IRF
IRFB42N20DPBF_15	文件：174.93 Kbytes Page：9 Pages	High frequency DC-DC converters	IRF International Rectifier	IRF
IRFS42N20D	文件：67.45 Kbytes Page：6 Pages	HighfrequencyDC-DCconverters Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters	IRF International Rectifier	IRF
IRFSL42N20D	文件：67.45 Kbytes Page：6 Pages	HighfrequencyDC-DCconverters Benefits ●LowGate-to-DrainChargetoReduceSwitchingLosses ●FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighfrequencyDC-DCconverters	IRF International Rectifier	IRF
IXFH42N20	文件：104.03 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFH42N20	文件：372.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFH42N20	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM42N20	文件：317.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=42A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFM42N20	文件：104.03 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM42N20	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFZ42N20	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS

詳細參數

型號：
IRFB42N20D
功能描述：
MOSFET N-CH 200V 44A TO-220AB
RoHS：
否
類別：
分離式半導體產品 >> FET - 單
系列：
HEXFET®
標準包裝：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金屬氧化物 FET
特點：
邏輯電平門
漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
C：
180 毫歐 @ 9A，10V Id 時的
Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
Vgs：
72nC @ 10V 輸入電容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安裝類型：
通孔
封裝/外殼：
TO-220-3 整包
供應商設備封裝：
TO-220FP
包裝：
管件

供應商	型號	品牌	批號	封裝	庫存	備注	價格
柒號芯城電子商務(深圳)有限公司	IRFB42N20D	IR	2024+	N/A	70000	柒號只做原裝現貨價秒殺全網	詢價
深圳市勤思達科技有限公司	IRFB42N20D	IR	2015+	TO-220AB	12500	全新原裝,現貨庫存長期供應	詢價
深圳市博浩通科技有限公司	IRFB42N20D	IR	23+	TO-220AB	8600	全新原裝現貨	詢價
深圳市一線半導體有限公司	IRFB42N20D	IR	24+	TO-220AB	8866		詢價
深圳市弘為電子有限公司	IRFB42N20D	IR	24+	原廠封裝	139	原裝現貨假一罰十	詢價
深圳市昌和盛利電子有限公司	IRFB42N20D	IR	23+	TO-220	9896		詢價
深圳市永貝爾科技有限公司	IRFB42N20D	IRF	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市華來深電子有限公司	IRFB42N20D	IR	23+	TO-220-3	11846	一級代理商現貨批發(fā),原裝正品,假一罰十	詢價
瀚佳科技(深圳)有限公司	IRFB42N20D	IR	24+	TO-220AB	16800	絕對原裝進口現貨,假一賠十,價格優(yōu)勢!?	詢價
深圳市仟禧電子有限公司	IRFB42N20D	IR/VISHAY	22+	TO-220	20000	保證原裝正品,假一陪十	詢價

更多IRFB42N20D供應商更新時間2025-1-19 9:00:00

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