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IRFBC40AS

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40AS

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSu

IRF

International Rectifier

IRFBC40AS

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40AS

Marking：D2PAK；Package：TO-263；iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFBC40AS_V01

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASPBF

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASTRL

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASTRLPBF

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASTRR

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASTRRPBF

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFBC40AS

  • 功能描述：

    MOSFET N-Chan 600V 6.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
19+
TO-263
12000
詢價(jià)
Vishay
2024+
TO-263-3
32560
原裝優(yōu)勢(shì)絕對(duì)有貨
 詢價(jià)
IR
24+
TO-263
501343
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
IR
550C+
TO-263
1212
只做原裝只有原裝
 詢價(jià)
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢價(jià)
IR
24+
大2腳半
2560
絕對(duì)原裝!現(xiàn)貨熱賣(mài)!
 詢價(jià)
IR
24+
D2-Pak
8866
詢價(jià)
IR
17+
TO-263
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
ir
24+
N/A
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
 詢價(jià)
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
 詢價(jià)
更多IRFBC40AS供應(yīng)商 更新時(shí)間2025-3-11 15:08:00

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