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IRFS640

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS640

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS640A

Improvedgatecharge

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFS640A

RuggedGateOxideTechnology

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowerRDS(ON):0.144(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS640A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS640B

200VN-ChannelMOSFET

DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenminimizeon-stateresistance,providesuperiorswitchingespeciallytailoredtominimizeon-stateresistance,provid

TGS

Tiger Electronic Co.,Ltd

IRFS640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRFW640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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2022+
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32500
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CJ/長(zhǎng)電
23+
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6000
原裝正品,支持實(shí)單
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CJ/長(zhǎng)電
2022+
TO-220F
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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CJ/長(zhǎng)電
20+
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32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
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只做原裝
24+
SOP-8L
36520
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IR
23+
SOP-8
7000
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IR
22+
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4500
全新原裝品牌專營(yíng)
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IOR
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62
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23+
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100000
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IR
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40
普通
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更多IRFF640供應(yīng)商 更新時(shí)間2025-3-14 14:01:00