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IRFI640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI640G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640G

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=9.8A)

DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in

IRF

International Rectifier

IRFI640G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI640G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640G

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconvert

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFI640GPBF

powermosfet

DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in

IRF

International Rectifier

IRFI640GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI640GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFI640A

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-262AA

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
TO-262
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
FAIRCHILD/仙童
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
 詢價
FSC
TO-262
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價
FSC
043+
TO-262
147
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IR
22+
TO-262
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
FAIRCHILD/仙童
23+
NA/
147
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
FSC
23+
TO-262
8000
只做原裝現(xiàn)貨
 詢價
FSC
23+
TO-262
7000
詢價
FSC
23+
TO-262
10000
原裝正品現(xiàn)貨
 詢價
FAIRCHILD/仙童
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多IRFI640A供應(yīng)商 更新時間2025-2-24 13:36:00

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