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IRFIBC30

Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRF

International Rectifier

IRFIBC30G

Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRF

International Rectifier

IRFIBC30G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導體

IRFIBC30G

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=2.2?(MAX) ?Enhancementmode:Vth=2to4V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFIBC30GPBF

HEXFET Power MOSFET

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRF

International Rectifier

IRFIBC30GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導體

IRFIBC30G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFIBC30G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFIBC30G_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFIBC30GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數

  • 型號：

    IRFIBC30

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)

供應商型號品牌批號封裝庫存備注價格
IR
21+
TO220
9852
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
IR
15+
TO-220F
11560
全新原裝,現貨庫存,長期供應
 詢價
IR
17+
TO-220F
6200
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-220F
10000
專做原裝正品,假一罰百!
 詢價
IR
23+
TO220
50000
全新原裝正品現貨,支持訂貨
 詢價
IR
2447
TO-220F
100500
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
 詢價
IR
23+
TO220
50000
全新原裝正品現貨,支持訂貨
 詢價
VB
21+
TO-220F
10000
原裝現貨假一罰十
 詢價
IR
24+
TO220
600
原裝現貨假一賠十
 詢價
更多IRFIBC30供應商 更新時間2025-4-30 17:16:00

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