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IRFIBC30

Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRF

International Rectifier

IRFIBC30G

Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRF

International Rectifier

IRFIBC30G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30G

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=2.2?(MAX) ?Enhancementmode:Vth=2to4V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFIBC30GPBF

HEXFET Power MOSFET

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRF

International Rectifier

IRFIBC30GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30G_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIBC30GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFIBC30

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
21+
TO220
9852
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
IR
15+
TO-220F
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
 詢價(jià)
IR
17+
TO-220F
6200
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-220F
10000
專做原裝正品,假一罰百!
 詢價(jià)
STOCK
1803+
QFN904
5316
向鴻原裝現(xiàn)貨庫(kù)存,代理渠道可原廠發(fā)貨-優(yōu)勢(shì)
 詢價(jià)
IR
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
2021+
TO-220F
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
IR
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VB
21+
TO-220F
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多IRFIBC30供應(yīng)商 更新時(shí)間2025-1-16 15:12:00

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