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IRFP260N

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤40m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP260NPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP260NPBF

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-247packaging ?Easeofparalleling ?Highspeedswitching ?Hardswitchedandhighfrequencycircuits ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP260PBF

HEXFET? Power MOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspre

IRF

International Rectifier

IRFP260PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP260_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP260MPBF

Advanced Process Technology

IRF

International Rectifier

IRFP260MPBF

Advanced Process Technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFP260MPBF_15

Advanced Process Technology

IRF

International Rectifier

IRFP260NPBF

Advanced Process Technology

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    IRFP260

  • 功能描述:

    MOSFET 46 Amps 200V 0.055 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO 3P
161350
明嘉萊只做原裝正品現(xiàn)貨
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
IR
23+
TO-247
35890
詢價
IR
05+
TO-247
1000
全新原裝 絕對有貨
詢價
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
詢價
IR
24+
原廠封裝
4000
原裝現(xiàn)貨假一罰十
詢價
IR
16+
TO-3P
10000
全新原裝現(xiàn)貨
詢價
24+
1100
詢價
IR
23+
TO-3P
5000
原裝正品,假一罰十
詢價
IR
23+
TO-247
11060
全新原裝現(xiàn)貨
詢價
更多IRFP260供應(yīng)商 更新時間2025-4-26 19:10:00