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IRFR9014

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surfacemount(IRFR9014,SiHFR9014) ?Straightlead(IRFU9014,SiHFU9014) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9014

Marking：FR9014；Package：TO252；P-Channel Enhancement Mode MOSFETl

Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

IRFR9014

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-5.1A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR9014

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL

IRF

International Rectifier

IRFR9014

HEXFET Power MOSFET

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL

IRF

International Rectifier

IRFR9014

P-CHANNEL POWER MOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR9014

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9014

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9014

isc P-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR9014_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surfacemount(IRFR9014,SiHFR9014) ?Straightlead(IRFU9014,SiHFU9014) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFR9014

  • 功能描述：

    MOSFET P-Chan 60V 5.1 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
VISHAY/威世
24+
TO-252
501747
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
24+
TO-252
1523
詢價(jià)
IR
05+
TO-252
15000
原裝進(jìn)口
 詢價(jià)
IR
23+
TO-252
18689
詢價(jià)
VISHAY
23+
DPak(TO252AA)
7750
全新原裝優(yōu)勢
 詢價(jià)
IR
24+
(TO-252)
1180
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
TO-252
20000
原裝正品,假一罰十
 詢價(jià)
IR
2020+
TO252
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價(jià)
更多IRFR9014供應(yīng)商 更新時(shí)間2025-1-23 13:44:00

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