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IRG4BC30S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features ?Standard:optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30S

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

IRF

International Rectifier

IRG4BC30SS

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30S-S

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30S-S

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30S-SPBF

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener

IRF

International Rectifier

IRG4BC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC30UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEUltraFastCoPackIGBT

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC30UDPBF

ULTRAFASTCOPACKIGBT

IRF

International Rectifier

IRG4BC30UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30UPBF

UltraFastSpeedIGBT

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Bene

IRF

International Rectifier

IRG4BC30US

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati

IRF

International Rectifier

IRG4BC30U-S

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati

IRF

International Rectifier

IRG4BC30U-SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage ?Lead-Free Benefit

IRF

International Rectifier

IRG4BC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRG4BC30K-STRRP

  • 功能描述：

    IGBT 模塊 600V ULTRAFAST 8-25KHZ DSCRETE IGBT

  • RoHS：

    否

  • 制造商：

    Infineon Technologies

  • 產(chǎn)品：

    IGBT Silicon Modules

  • 配置：

    Dual 集電極—發(fā)射極最大電壓

  • VCEO：

    600 V

  • 集電極—射極飽和電壓：

    1.95 V 在25

  • C的連續(xù)集電極電流：

    230 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    445 W

  • 最大工作溫度：

    + 125 C

  • 封裝/箱體：

    34MM

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2016+
TO-263
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
IR
2020+
TO-263
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
Infineon Technologies
21+
D2PAK
800
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
INFINEON
1503+
TO-263
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細信息,
 詢價
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
IR
22+
TO-263
8900
英瑞芯只做原裝正品!!!
 詢價
IR
13+
TO-263
5154
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多IRG4BC30K-STRRP供應(yīng)商 更新時間2024-11-16 9:45:00

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