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IRG4PC30UPBF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

UltraFastSpeedIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Genera

IRF

International Rectifier

IRG4PC30UPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PC30UPBF

包裝:卷帶(TR) 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 23A 100W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4PC30UPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

G4PC30F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

IRF

International Rectifier

G4PC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

IRF

International Rectifier

IRG4PC30F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC30F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

IRF

International Rectifier

IRG4PC30FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRF

International Rectifier

IRG4PC30FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC30FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC30FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPack1GBT

VCES=600V VCE(on)typ.=1.59V @VGE=15V,IC=17A Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packa

IRF

International Rectifier

IRG4PC30FPBF

INSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT

IRF

International Rectifier

IRG4PC30FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC30K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhighereffi

IRF

International Rectifier

IRG4PC30K

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgen

IRF

International Rectifier

IRG4PC30KDPBF

INSULATEDGATEBIPOALRTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packaged

IRF

International Rectifier

IRG4PC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IRG4PC30UPBF

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    卷帶(TR)

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.1V @ 15V,12A

  • 開關(guān)能量:

    160μJ(開),200μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時 Td(開/關(guān))值:

    17ns/78ns

  • 測試條件:

    480V,12A,23 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應(yīng)商器件封裝:

    TO-247AC

  • 描述:

    IGBT 600V 23A 100W TO247AC

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
標(biāo)準(zhǔn)封裝
28048
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。
詢價
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
IR
16+
原廠封裝
14975
原裝現(xiàn)貨假一罰十
詢價
Infineon
18+
NA
3429
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
詢價
IR
9856
TO-247
1812
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
VISHAY
2018+
TO-247
12000
VISHAY專營進(jìn)口原裝現(xiàn)貨假一賠十
詢價
ir
23+
NA
4036
專做原裝正品,假一罰百!
詢價
IR
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
詢價
更多IRG4PC30UPBF供應(yīng)商 更新時間2024-11-15 23:00:00