IRG4PC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRG4PC30FD

Fit Rate / Equivalent Device Hours

IRG4PC30FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT

VCES=600V VCE(on)typ.=1.59V @VGE=15V,IC=17A Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packa

IRG4PC30FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4PC30FDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4PC30FDPBF

包裝：卷帶（TR） 封裝/外殼：TO-247-3 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 31A 100W TO247AC

IRG4PC30FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC30FPBF

INSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT

IRG4PC30K

FitRate/EquivalentDeviceHours

IRG4PC30K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhighereffi

IRG4PC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgen

IRG4PC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRG4PC30KDPBF

INSULATEDGATEBIPOALRTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packaged

IRG4PC30KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevio

IRG4PC30KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC30S

FitRate/EquivalentDeviceHours

IRG4PC30S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

StandardSpeedIGBT Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4PC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRG4PC30SPBF

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

IRG4PC30U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

UltraFastSpeedIGBT Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?