首頁 >IRLR2905PBFDIODE>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
60VN-ChannelEnhancementModePowerMOSFET GeneralDescription TheUMWIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTec | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
60VN-ChannelEnhancementModePowerMOSFET GeneralDescription TheIRLR2905TRusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnol | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
LogicLevel | IRF International Rectifier | IRF | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=55V RDS(on)=0.027? ID=42A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscSiliconNPNPowerTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
NA |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
NA |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
NA |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
NA |
7000 |
詢價(jià) | |||
24+ |
N/A |
75000 |
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
INFINEON/英飛凌 |
2022+ |
5000 |
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。 |
詢價(jià) | |||
IR |
23+ |
TO252 |
28533 |
原盒原標(biāo),正品現(xiàn)貨 誠信經(jīng)營 價(jià)格美麗 假一罰十! |
詢價(jià) | ||
IR |
05+ |
原廠原裝 |
4051 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
24+ |
TO-252 |
200000 |
詢價(jià) | |||
IR |
24+ |
TO-252 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) |
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