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IXEH25N120

NPT3 IGBT

Features ?NPT3IGBT -positivetemperaturecoefficientof saturationvoltageforeasyparalleling -fastswitching -shorttailcurrentforoptimized performanceinresonantcircuits ?optionalHiPerFRED?diode -fastreverserecovery -lowoperatingforward

IXYS

IXYS Corporation

IXEH25N120

包裝：管件 封裝/外殼：TO-247-3 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 36A 200W TO247AD

IXYS

IXYS Corporation

IXEH25N120D1

包裝：卷帶（TR） 封裝/外殼：TO-247-3 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 36A 200W TO247AD

IXYS

IXYS Corporation

IXGH25N120

LowVCE(sat)HighspeedIGBT

LowVCE(sat)HighspeedIGBT Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DC

IXYS

IXYS Corporation

IXGH25N120A

LowVCE(sat)HighspeedIGBT

LowVCE(sat)HighspeedIGBT Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DC

IXYS

IXYS Corporation

IXSH25N120A

IGBT

IGBTImprovedSCSOACapability Features ?SecondgenerationHDMOSTMprocessLowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?Uninterruptiblepowersupplies(UPS) ?Switc

IXYS

IXYS Corporation

K25N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

KGF25N120KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

KGH25N120NDA

SEMICONDUCTORTECHNICALDATA

GeneralDescription KECNPTIGBTsofferlowestlossesandhighestenergyefficiencyforapplicationsuchasIH(inductionheating),UPS,Generalinverterandothersoftswitchingapplications. FEATURES ·Highspeedswitching ·Highersystemefficiency ·Softcurrentturn-offwavef

KECKEC CORPORATION

KEC株式會(huì)社

KGT25N120KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

KGT25N120KDA

SEMICONDUCTORTECHNICALDATA

KECKEC CORPORATION

KEC株式會(huì)社

KGT25N120NDA

SEMICONDUCTORTECHNICALDATA

KECKEC CORPORATION

KEC株式會(huì)社

KGT25N120NDH

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

MGY25N120

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtime.Fastswitchingcharacteri

Motorola

Motorola, Inc

MGY25N120

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtime.Fastswitchingcharacteri

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGY25N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblock

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGY25N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblock

Motorola

Motorola, Inc

MIW25N120FA

TrenchandFieldStopIGBT1200V25A

Features ?LowVCE(sat)Trench-FSIGBTtechnology ?Positivetemperaturecoefficient ?Includingfast&softrecoveryanti-parallelFWD ?Highshortcircuitcapability(10us) ?HalogenFree.“Green”Device(Note1) ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCompliant

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MIW25N120FA-BP

TrenchandFieldStopIGBT1200V25A

Features ?LowVCE(sat)Trench-FSIGBTtechnology ?Positivetemperaturecoefficient ?Includingfast&softrecoveryanti-parallelFWD ?Highshortcircuitcapability(10us) ?HalogenFree.“Green”Device(Note1) ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCompliant

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

NGTB25N120FLWG

IGBT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    IXEH25N120

  • 制造商：

    IXYS

  • 類(lèi)別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • IGBT 類(lèi)型：

    NPT

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    3.2V @ 15V，25A

  • 開(kāi)關(guān)能量：

    4.1mJ（開(kāi)），1.5mJ（關(guān)）

  • 輸入類(lèi)型：

    標(biāo)準(zhǔn)

  • 測(cè)試條件：

    600V，20A，68 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類(lèi)型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247AD

  • 描述：

    IGBT 1200V 36A 200W TO247AD

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
23+
DIP18
6000
15年原裝正品企業(yè)
 詢價(jià)
IXYS
24+
TO-247
8866
詢價(jià)
IXYS
23+
TO247
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
IXYS
1503+
TO-247
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
10000
公司只做原裝正品
 詢價(jià)
IXYS
22+
TO247AD
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
6000
原裝正品，支持實(shí)單
 詢價(jià)
IXYS
2022+
TO-247AD
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
 詢價(jià)
IXYS/艾賽斯
22+
TO-247
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
IXYS
24+
TO-247-3
9350
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
更多IXEH25N120供應(yīng)商 更新時(shí)間2024-10-25 15:00:00

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