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IXGH25N120

Low VCE(sat) High speed IGBT

LowVCE(sat)HighspeedIGBT Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DC

IXYS

IXYS Corporation

IXGH25N120

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 50A 200W TO247AD

IXYS

IXYS Corporation

IXGH25N120A

Low VCE(sat) High speed IGBT

LowVCE(sat)HighspeedIGBT Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DC

IXYS

IXYS Corporation

IXGH25N120A

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 50A 200W TO247AD

IXYS

IXYS Corporation

IXSH25N120A

IGBT

IGBTImprovedSCSOACapability Features ?SecondgenerationHDMOSTMprocessLowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?Uninterruptiblepowersupplies(UPS) ?Switc

IXYS

IXYS Corporation

K25N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

KGF25N120KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

KGH25N120NDA

SEMICONDUCTORTECHNICALDATA

GeneralDescription KECNPTIGBTsofferlowestlossesandhighestenergyefficiencyforapplicationsuchasIH(inductionheating),UPS,Generalinverterandothersoftswitchingapplications. FEATURES ·Highspeedswitching ·Highersystemefficiency ·Softcurrentturn-offwavef

KECKEC CORPORATION

KEC株式會(huì)社

KGT25N120KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

KGT25N120KDA

SEMICONDUCTORTECHNICALDATA

KECKEC CORPORATION

KEC株式會(huì)社

KGT25N120NDA

SEMICONDUCTORTECHNICALDATA

KECKEC CORPORATION

KEC株式會(huì)社

KGT25N120NDH

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

MGY25N120

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtime.Fastswitchingcharacteri

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGY25N120

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtime.Fastswitchingcharacteri

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGY25N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblock

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGY25N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblock

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MIW25N120FA

TrenchandFieldStopIGBT1200V25A

Features ?LowVCE(sat)Trench-FSIGBTtechnology ?Positivetemperaturecoefficient ?Includingfast&softrecoveryanti-parallelFWD ?Highshortcircuitcapability(10us) ?HalogenFree.“Green”Device(Note1) ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCompliant

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MIW25N120FA-BP

TrenchandFieldStopIGBT1200V25A

Features ?LowVCE(sat)Trench-FSIGBTtechnology ?Positivetemperaturecoefficient ?Includingfast&softrecoveryanti-parallelFWD ?Highshortcircuitcapability(10us) ?HalogenFree.“Green”Device(Note1) ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCompliant

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

NGTB25N120FLWG

IGBT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB25N120IHLWG

Incorporatedintothedeviceisaruggedco??ackagedfreewheelingdiodewithalowforwardvoltage.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IXGH25N120

  • 制造商：

    IXYS

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    3V @ 15V，25A

  • 開關(guān)能量：

    11mJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td（開/關(guān)）值：

    100ns/650ns

  • 測試條件：

    960V，25A，33 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247AD

  • 描述：

    IGBT 1200V 50A 200W TO247AD

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
IXYS
24+
TO-247
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
 詢價(jià)
IXYS
24+
TO-247
1344
詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
5425
公司只做原裝正品
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IXYS
22+
TO247AD (IXGH)
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
更多IXGH25N120供應(yīng)商 更新時(shí)間2025-1-15 9:02:00

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