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IXFK26N90

HiPerFET Power MOSFETs

HiPerFET?PowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Appl

IXYS

IXYS Corporation

IXFK26N90

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

26N90

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Appl

IXYS

IXYS Corporation

IXFN26N90

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtrrFastIntrinsicDiode Features ●Internationalstandardpackage ●miniBLOC,withAluminiumnitrideisolation ●LowRDS(ON)HDMOSTMprocess ●AvalancheRated ●Lowpackageinductance ●Fastintrinsicdiode Advantages ●Lowgate

IXYS

IXYS Corporation

IXFN26N90

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtrrFastIntrinsicDiode Features ●Internationalstandardpackage ●miniBLOC,withAluminiumnitrideisolation ●LowRDS(ON)HDMOSTMprocess ●AvalancheRated ●Lowpackageinductance ●Fastintrinsicdiode Advantages ●Lowgate

IXYS

IXYS Corporation

IXFN-26N90

HiPerFETTMPowerMOSFETsSingleDieMOSFET

IXYS

IXYS Corporation

IXFX26N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX26N90

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Appl

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFK26N90

  • 功能描述：

    MOSFET 26 Amps 900V 0.3 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-3PL
125
詢價(jià)
IXYS
2016+
TO-264
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
IXYS
23+
TO-3PL
9960
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
IXY
06+
TO-3PL
500
原裝
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
2020+
TO-3PL
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
 詢價(jià)
IXYS
24+
TO-3PL
190
詢價(jià)
IXYS
1931+
N/A
18
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 詢價(jià)
IXYS
1809+
TO-264
326
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更多IXFK26N90供應(yīng)商 更新時(shí)間2025-3-3 15:30:00

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