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IXFK60N55Q2

HiPerFET Power MOSFETs Q-Class

Features ?Doublemetalprocessforlowgateresistance ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?Avalancheenergyandcurrentrated ?FastintrinsicRectifier Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFK60N55Q2

HiPerFET Power MOSFETs Q-Class

Features ?Doublemetalprocessforlowgateresistance ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?Avalancheenergyandcurrentrated ?FastintrinsicRectifier Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

CEW60N55S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 550V,60A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

IXFK60N55

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=88mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX60N55

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=88mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD60N55

N-channel55V-8.0m??-65A-DPAK-IPAKMDmesh??lowvoltagePowerMOSFET

Description Thisn-channelenhancementmodePowerMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize?“strip-basedprocesswithlesscriticalaligmentstepsandthereforearemarkablemanufacturingreproducibility.Theresultingtransistorshowsextremelyhighpackin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    IXFK60N55Q

  • 功能描述：

    MOSFET 60 Amps 550V 0.09 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-264AA(IXFK)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS
24+
TO-264
8866
詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS
24+
TO-3PL
264
詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-264
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS
22+
TO2643 TO264AA
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IXFK60N55Q供應(yīng)商 更新時間2025-1-17 17:10:00

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