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IXFR10N100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR10N100F

HiPerFET Power MOSFETs ISOPLUS247

HiPerFET?PowerMOSFETsISOPLUS247?F-Class:MegaHertzSwitching(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSw

IXYS

IXYS Corporation

IXFR10N100Q

N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances

HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface

IXYS

IXYS Corporation

IXFR10N100Q

HiPerFET Power MOSFETs ISOPLUS247 Q CLASS

HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface

IXYS

IXYS Corporation

IXFT10N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ?Internationalstandardpackage ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?FastintrinsicRectifier Applications ?DC-DCconverters ?Synchronou

IXYS

IXYS Corporation

IXFT10N100Q

HiPerFETTMPowerMOSFETsQClass

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Corporation

IXFV10N100P

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications: ?Switched-modeandresonant-modepow

IXYS

IXYS Corporation

IXFV10N100PS

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications: ?Switched-modeandresonant-modepow

IXYS

IXYS Corporation

IXGH10N100

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGH10N100A

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXTH10N100

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTH10N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTH10N100D

N-Channel,DepletionMode

IXYS

IXYS Corporation

IXTM10N100

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTT10N100D

N-Channel,DepletionMode

IXYS

IXYS Corporation

MTM10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTV10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE-FETPowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTV10N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTV10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTW10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFR10N100

  • 制造商：

    IXYS

  • 制造商全稱(chēng)：

    IXYS Corporation

  • 功能描述：

    HiPerFET Power MOSFETs ISOPLUS247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
IXYS
24+
TO-247
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
 詢(xún)價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢(xún)價(jià)
IXYS
1809+
TO-247
96
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
IXYS/艾賽斯
23+
ISOPLUS247
10000
公司只做原裝正品
 詢(xún)價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
 詢(xún)價(jià)
IXYS
22+
ISOPLUS247?
9000
原廠渠道,現(xiàn)貨配單
 詢(xún)價(jià)
IXYS
21+
ISOPLUS247?
13880
公司只售原裝,支持實(shí)單
 詢(xún)價(jià)
IXYS/艾賽斯
23+
ISOPLUS247
6000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
IXYS
2022+
ISOPLUS247?
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
 詢(xún)價(jià)
更多IXFR10N100供應(yīng)商 更新時(shí)間2024-12-27 9:00:00

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