首頁 >IXTA3N120-TRL>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NPN/PNPDUALEMITTERCHOPPERBI-POLARTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
Powerswitchcircuitofadaptorandcharger | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
Electricwelder,Inverter | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
HiPerFETPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits.. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
HighVoltagePowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
HighVoltagePowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
HighVoltagePowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andAC-DCmotorcontrols | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V APPLICATIONS ·Switching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighVoltagePowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
HighVoltagePowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on) ●RatedforunclampedInductiveloadSwitching(UIS) ●MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ●Easytomount ●Spacesavings ●Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
TMOSPOWERFET3.0AMPERES1200VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFET3.0AMPERES1200VOLTSRDS(on)=5.0OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–voltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime. | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-263AA |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
NA |
4416 |
有掛有貨原裝正品現(xiàn)貨,假一賠十 |
詢價 | ||
IXYS |
23+ |
TO-263 |
10770 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
詢價 | ||
IXYS |
23+ |
TO-263 |
15038 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
LITTELFUSE/力特 |
23+ |
NA |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IXYS |
22+ |
TO-263 |
10000 |
原裝正品,渠道現(xiàn)貨 |
詢價 | ||
IXYS/艾賽斯 |
22+ |
TO-263 |
3000 |
原裝正品 |
詢價 | ||
IXYS |
24+ |
TO-263 |
10000 |
一級代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價格合理 |
詢價 | ||
IXYS |
22+ |
TO-263 |
3722 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價 | ||
IXYS |
21+ |
N/A |
2800 |
全新原裝虧本出 |
詢價 |
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