首頁 >JMTK80N06A>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
JMTK80N06A | JJW | |||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-ChannelPowerMOSFET | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-Channel60V(D-S)MOSFET FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization: | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
捷捷微 |
23+ |
TO-252 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
JJW捷捷微 |
22+ |
TO-252 |
10000 |
原裝正品,渠道現(xiàn)貨 |
詢價 | ||
捷捷 |
24+ |
TO-252-4R |
5000 |
一級代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價格合理 |
詢價 | ||
捷捷 |
24+ |
TO-252-4R |
5000 |
十年沉淀唯有原裝 |
詢價 | ||
捷捷 |
23+ |
TO-252-4R |
20000 |
詢價 | |||
JJW |
2342 |
TO-252 |
20000 |
原裝正品價格優(yōu)惠,志同道合共謀發(fā)展 |
詢價 | ||
捷捷微 |
23+ |
TO-252-3L |
68000 |
捷捷微全系列供應(yīng),支持終端生產(chǎn) |
詢價 | ||
JJW |
23+ |
TO-252 |
5000 |
詢價 | |||
捷捷 |
23+/24+ |
TO-252-4R |
15000 |
原裝進(jìn)口、正品保障、合作持久 |
詢價 | ||
24+ |
N/A |
47000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
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