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K4H511638B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl

SamsungSamsung semiconductor

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K4H511638B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-UC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-UCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-ULCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-Z

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-ZCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-ZLCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638D

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung semiconductor

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K4H511638D

512MbD-dieDDRSDRAMSpecification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-UC/LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

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K4H511638F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

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K4H511638F-LC/LCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

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K4H511638G

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

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K4H511638G

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

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供應商型號品牌批號封裝庫存備注價格
samsung
23+
TSSOP
9980
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價
SAMSUNG
24+
TSOP
44
詢價
SAMSANG
19+
TSSOP
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
SAMSUNG
6000
面議
19
DIP/SMD
詢價
SAMSUNG
22+
TSSOP
32350
原裝正品 假一罰十 公司現(xiàn)貨
詢價
SAMSUNG
23+
TSSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
SAMSUNG/三星
21+
TSSOP
10000
原裝現(xiàn)貨假一罰十
詢價
SAN
23+
QFP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
詢價
K4H511638B-TCB0
100
100
詢價
SAMSUNG
22+
TSSOP
8000
原裝正品支持實單
詢價
更多K4H511638B-TCAC供應商 更新時間2024-11-16 14:02:00