首頁 >K4H511638G-LCSLASHLCC>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
K4H511638G-LCSLASHLCC | 512Mb G-die DDR SDRAM Specification GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal | SamsungSamsung semiconductor 三星三星半導體 | Samsung | |
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導體 | Samsung |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
23+ |
TSOP66 |
13000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
SAMSUNG |
2023+ |
TSOP |
3000 |
進口原裝現貨 |
詢價 | ||
SAMSUNG/三星 |
23+ |
TSOP-66 |
89630 |
當天發(fā)貨全新原裝現貨 |
詢價 | ||
SAMSANG |
19+ |
BGA |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
SAMSUNG |
23+ |
BGA |
8000 |
只做原裝現貨 |
詢價 | ||
SAMSUNG |
23+ |
BGA |
7000 |
詢價 | |||
SAMSUNG |
24+ |
BGA |
30617 |
三星閃存專營品牌店全新原裝熱賣 |
詢價 | ||
SAM |
1844+ |
BGA |
6528 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
SAMSUNG |
14+ |
5328 |
只做原裝正品 |
詢價 | |||
HYNIX |
2020+ |
BGA |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |
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