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M5M4V4265CTP-6S中文資料三菱電機數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
M5M4V4265CTP-6S |
功能描述 | EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM |
文件大小 |
317.4 Kbytes |
頁面數(shù)量 |
31 頁 |
生產(chǎn)廠商 | Mitsubishi Electric Semiconductor |
企業(yè)簡稱 |
Mitsubishi【三菱電機】 |
中文名稱 | 三菱電機株式會社官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-3-13 19:21:00 |
人工找貨 | M5M4V4265CTP-6S價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
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DESCRIPTION
This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.
FEATURES
● Standard 40 pin SOJ, 44 pin TSOP (II)
● Single 3.3±0.3V supply
● Low stand-by power dissipation
CMOS Input level ---------------------------------- 1.8mW (Max)
CMOS Input level ---------------------------------- 360μW (Max) *
● Operating power dissipation
M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)
M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)
M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)
● Self refresh capability *
Self refresh current ------------------------------ 100μA (Max)
● Extended refresh capability
Extended refresh current -------------------------- 100μA (Max)
● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.
● Early-write mode, OE and W to control output buffer impedance
● 512 refresh cycles every 8.2ms (A0~A8)
● 512 refresh cycles every 128ms (A0~A8) *
● Byte or word control for Read/Write operation (2CAS, 1W type)
* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only
APPLICATION
Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT
產(chǎn)品屬性
- 型號:
M5M4V4265CTP-6S
- 制造商:
Mitsubishi Electric
- 功能描述:
256K X 16 EDO DRAM, 60 ns, PDSO40
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FUJI |
99+ |
SOP40 |
3300 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
MITSUBISHI/三菱 |
24+ |
TSOP |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
MITSUBISHI |
24+ |
TSSOP |
20000 |
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅??! |
詢價 | ||
MIT |
23+ |
QFP |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
MITSUBISHI/三菱 |
23+ |
TSOP |
6850 |
只做原廠原裝正品現(xiàn)貨!假一賠十! |
詢價 | ||
FUJI |
17+ |
SOP40 |
9988 |
只做原裝進口,自己庫存 |
詢價 | ||
NA |
24+ |
165 |
原裝現(xiàn)貨假一賠十 |
詢價 | |||
MIT |
2020+ |
TSOP |
4500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
MITSUBISHI |
98+ |
TSSOP |
480 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
MIT |
20+ |
TSOP |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價 |